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FDD6760A N-Channel Power Trench(R) MOSFET
January 2009
FDD6760A
N-Channel PowerTrench(R) MOSFET
25 V, 3.2 m Features
Max rDS(on) = 3.2 m at VGS = 10 V, ID = 27 A Max rDS(on) = 6.0 m at VGS = 4.5 V, ID = 21 A 100% UIL test RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture
D
D G S
G
D-PAK TO -252 (TO-252)
S
MOSFET Maximum Ratings TC = 25 C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) Ratings 25 20 50 131 27 200 72 65 3.7 -55 to +175 mJ W C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 2.3 40 C/W
Package Marking and Ordering Information
Device Marking FDD6760A Device FDD6760A Package D-PAK (TO-252) Reel Size 13 '' Tape Width 12 mm Quantity 2500 units
(c)2009 Fairchild Semiconductor Corporation FDD6760A Rev.C
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FDD6760A N-Channel Power Trench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 20 V, VGS = 0 V VGS = 20 V, VDS = 0 V 25 16 1 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V, ID = 27 A VGS = 4.5 V, ID = 21 A VGS = 10 V, ID = 27 A, TJ = 150 C VDS = 5 V, ID = 27 A 1.0 1.6 -7 2.3 4.4 3.5 186 3.2 6.0 4.9 S m 3.0 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 13 V, VGS = 0 V, f = 1MHz f = 1MHz 2380 525 470 1.3 3170 700 710 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 13 V, ID = 17 A VDD = 13 V, ID = 27 A, VGS = 10 V, RGEN = 6 10 9 28 6 44 25 6 9.9 62 35 20 18 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 3.1 A VGS = 0 V, IS = 27 A IF = 27A, di/dt = 100 A/s (Note 2) (Note 2) 0.7 0.8 21 8 1.2 1.3 34 16 V ns nC
Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design.
a) 40 C/W when mounted on a 1 in2 pad of 2 oz copper
b) 96 C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3: EAS of 72 mJ is based on starting TJ = 25 C, L = 1 mH, IAS = 12 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 29 A.
(c)2009 Fairchild Semiconductor Corporation FDD6760A Rev.C
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FDD6760A N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
200
VGS = 10 V ID, DRAIN CURRENT (A) VGS = 4.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
4
VGS = 3.5 V
150
VGS = 6 V VGS = 4 V
3
VGS = 4 V
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 4.5 V VGS = 6 V
100
VGS = 3.5 V
2
50
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
1
VGS = 10 V
0 0
0 0 50 100 ID, DRAIN CURRENT (A) 150 200
0.5
1.0
1.5
2.0
2.5
3.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
14
SOURCE ON-RESISTANCE (m)
1.8
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.6 1.4 1.2 1.0 0.8
ID = 27 A VGS = 10 V
12 10 8 6 4 2 0 2 4
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
ID = 27 A
rDS(on), DRAIN TO
TJ = 150 oC
TJ = 25 oC
0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance vs Junction Temperature
200
IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
Figure 4. On-Resistance vs Gate to Source Voltage
200 100
VGS = 0 V
ID, DRAIN CURRENT (A)
150
VDS = 3.5 V
10
TJ = 175 oC
100
TJ = 25 oC
50
TJ = 175 oC TJ = -55 oC
1
TJ = -55 oC TJ = 25 oC
0 0 1 2 3 4 5 6
VGS, GATE TO SOURCE VOLTAGE (V)
0.1 0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
(c)2009 Fairchild Semiconductor Corporation FDD6760A Rev.C
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FDD6760A N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 27 A
6000
Ciss
CAPACITANCE (pF)
8 6
VDD = 10 V VDD = 13 V
1000
Coss
4
VDD = 16 V
Crss
f = 1 MHz VGS = 0 V
2 0 0 9 18 27 36 45
Qg, GATE CHARGE (nC)
100 0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
120
ID, DRAIN CURRENT (A)
VGS = 10 V
100
IAS, AVALANCHE CURRENT (A)
90
TJ = 125 oC
10
TJ = 150 oC TJ = 25 oC
60
VGS = 4.5 V
30
Limited by Package RJC = 2.3 C/W
o
1 0.001
0.01
0.1
1
10
100
1000
0 25
50
75
100
125
o
150
175
tAV, TIME IN AVALANCHE (ms)
Tc, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
500
10 us
ID, DRAIN CURRENT (A)
Figure 10. Maximum Continuous Drain Current vs Case Temperature
3000
P(PK), PEAK TRANSIENT POWER (W)
100
1000
VGS = 10 V
SINGLE PULSE RJC = 2.3 oC/W TC = 25 oC
10
THIS AREA IS LIMITED BY rDS(on)
100 us 1 ms
1
SINGLE PULSE TJ = MAX RATED RJC = 2.3 oC/W TC = 25 oC
10 ms 100 ms DC
100
0.1 0.1
1
10
70
20 -5 10
10
-4
10
-3
10
-2
10
-1
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
(c)2009 Fairchild Semiconductor Corporation FDD6760A Rev.C
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FDD6760A N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
2
1
NORMALIZED THERMAL IMPEDANCE, ZJC
DUTY CYCLE-DESCENDING ORDER
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.1
SINGLE PULSE RJC = 2.3 C/W
o
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC
0.02 -5 10
10
-4
10
-3
10
-2
10
-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
2 1
NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1
0.01
SINGLE PULSE RJA = 96 C/W (Note 1b)
o
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
-1 0 1
0.001 -4 10
10
-3
10
-2
10
10
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Transient Thermal Response Curve
(c)2009 Fairchild Semiconductor Corporation FDD6760A Rev.C
5
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FDD6760A N-Channel Power Trench(R) MOSFET
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Rev. I37
(c)2009 Fairchild Semiconductor Corporation FDD6760A Rev.C
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